Minsoo Lee Books

Growth and characterization of HfOxNy gate insulators on Si(100).
Growth and characterization of HfOxNy gate insulators on Si(100).

By Minsoo Lee

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It was found that N incorporation in HfOxNy films improved the main drawbacks of HfO2, poor amorphous phase stability and high impurity diffusion rate, by inhibiting atomic diffusion in the films....

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