A. Luft Books
July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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Kristall Und Technik : [Fortsetzung: Crystal Research And Technology]. Band 7, Heft 10
By H. Hildebrand, K. Thiele, J. Ladurner, D. Becker, H. Schreiber, K. Hübner, A. Luft, G. Kuhn, J. Nyvlt, H. Johansen, A. Zehe, E. Brink, R. Schubert, G. Kunze, G. Turrell, F. Purtscheller, H. Bank, Jiri Kvapil, S Däbritz, F Feldhofer, K Götze, F. P Herrmann, S Kuschnerus, Josef Kvapil, A Leonhabdt, J. H Scharf, Juraj Sùlovsky, J Teltow, K Tempelhoff, H. J Ullrich
Hinweise für die Autoren Inhalt Originalbeiträge Zur Abschätzung physikalischer und physikalisch chemischer Daten yon A1B V -Verbindungen mit Zinkblendestruktur Ein einfaches Verfahren zur Herstell...
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