P. Mathur Books
July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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Developments And Changes In Science Based Technologies
By S. Mathur, K. Mathur, P. Mathur
With Scientific Developments, Certain New Technologies Based On Such Scientific Principles Have Now Been Adopted Worldwide. This Has Resulted In Complete Or Partial Eradication Of Some Old Technolo...
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