R. Rupp Books
NATO After 9/11
By RICHARD E. RUPP, R. Rupp, Richard E. Rupp (Auth.)
The Alliance has endeavoured to identify a new raison d'être since 1991, but no unifying set of priorities has surfaced. In the absence of a menace to their vital interests, and with fundamental po...
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Nato After 9/11: An Alliance In Continuing Decline
By RICHARD E. RUPP, R. Rupp, Richard E. Rupp (Auth.)
despite Fifteen Years Of Concerted Effort To Remake Nato, The Much Heralded Alliance Is In Decline. The States That Established Nato In 1949 Confronted A Common Threat To Their Survival. The Allian...
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De Vier Elementen
By Rebecca Rupp, R. Rupp, Bagas & Partners (Nijmegen), Rebecca Rupp, Celbioloog En Publicist In De VS.
287 p. : 24 cm Achtergronden bij natuurverschijnselen thematisch verteld aan de hand van de vier elementen Met lit. opg., index
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NATO After 9/11
By RICHARD E. RUPP, R. Rupp, Richard E. Rupp (Auth.)
The Alliance has endeavoured to identify a new raison d'être since 1991, but no unifying set of priorities has surfaced. In the absence of a menace to their vital interests, and with fundamental po...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
Read More
