K. Board Books
An Introduction To Semiconductor Microtechnology
By D. V. Morgan, K. Board
La 4e de couv. indique : "This book provides an introduction to the technology of semiconductors and integrated circuits. The primary emphasis is on principles, yet a real-life design sequence is i...
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An Introduction To Semiconductor Microtechnology
By D. V. Morgan, K. Board
La 4e de couv. indique : "This book provides an introduction to the technology of semiconductors and integrated circuits. The primary emphasis is on principles, yet a real-life design sequence is i...
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An Introduction To Semiconductor Microtechnology
By MORGAN, D. V. Morgan, K, D. V***, Board, K. Board, Morgan, D. V., Board, K.
An Introduction to Semiconductor Microtechnology Second Edition D. V. Morgan School of Electrical, Electronic and Systems Engineering, University of Wales, College of Cardiff, Wales K. Board Depart...
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Simulation Of Semiconductor Devices And Processes: Proceedings Of An International Conference Held At University College Of Swansea, Swansea, U.K. On July 9th-12th, 1984
By D. R.J. Owen, K. Board, International Conference On Simulation Of Semiconductor Devices And Processes (1st 1984 University College Of Swansea), K Board, D. R. J Owen, International Conference On Simulation Of Semiconductor Devices And Processes, International Conference On Simulation Of Semiconductor Devices And Pr...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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July 16
By S. Panchapakesan, W. Reichelt, V. Zaĭt︠S︡Ev, H. Bangert, D. Morgan, Görlich, J. Abell, R. Rupp, P. Paufler, P. Jacobs, H. Pfeiffer, H. Wagner, J. Pérez, M. Nicolet, A. Heinrich, H. Lemke, A. Gurevich, V. Dimza, Y. Aoki, H. Kronmüller, R. Gould, T Malik, M. Castagné, B. Loginov, J. Horvath, H. Loffler, S. Maksimov, D. Bräunig, A. Zotov, A. Luft, A. Mohammad, R. Verma, C. Wood, S. Ramos, L. Eastman, G. Flik, K. Board, H. Mehrer, H. Lange, B. Majumdar, B. CHANDRA, E. Krätzig, A. Aly, A. Tyagi, F. Reynaud, G. Scholz, J. Hafner, V. Nikolaev, K. Ikeda, H. Oppermann, P. Khabibullaev, S. Deshpande, V. Hnatowicz, V Rybka, V Atzrodt, P. Colombet, B. Kuhlow, A. Moskalev, S Radautsan, J Suwalski, F Fouquet, J Bonnafe, A. Abdeen, A Kaminskii, S Däbritz, Y. He, L. Stals, M. Coster, Y. Badr, P. Mathur, J. Echigoya, H. Solbrig, N. Komolova, Q. Yang, V Akhmetov, I Aleksandrova, A Ambrozhevich, S Awad, I Belobrova, P Bhat, E Bobchert, V Bolotov, S Bulyarskh, K Buschow, J Cerro, T Chandraker, J Chermant, N Chistyakova, A Curzon, M Daitot, A Dawar, R Dimmich, A Dvurechenskii, J Edington, L Emiryan, N Erben, W Fahrner, J Fillard, F Fkindt, R Gkotzschel, D Golopentia, M Ibarra, N Igonina, D Ioannou, J Isidoro, A Jaiswal, J Janicki, J Jernot, B Kashnjkov, L Kertesz, L Khiznichenko, A Kidawa, K Kleinstück, J Kojnok, H Kolkman, V Korobtsov, P Krejci, Partap Kumar, J Kvitek, H Kürsten, H Labany, K Lcschke, C Lien, J Montenegro, A Moral, E Nagdaev, R Nandedkar, Wee Ng, K Nikiforov, A Ommen, B Paine, A Pbedvoditelev, S Pearton, L Pelikan, J Pietbzak, P Pongratz, A Porebska, I Reda, Ch Ritschel, V Rusakov, T Ryumshina, S Saekisov, D Schultze, L Slifkin, A Sprogis, A Sulakov, H Swijgenhoven, A Szlsz, D Taneja, M Teemblet, E Terukov, V Tezlevan, N Tulyaganova, K Vaeatharajak, K Vahvaselkä, S Vilkovskii, C Vliet, F Wabkusz, A Wagendkistel, L Wielunski, Th Wirth, R Witula, M Wurlitzeb, V Ykh, V Zavodinskii, L Zherebtsova, A Ziel, L Zotova
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen \((\mathrm{VO})\) complexes in silicon at electron irradiation with the growth of the c...
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